tlpge23t,TLFGE23T,tlge23t,tlpye23t 2002-01-18 1 toshiba ingaa ? p led tlpge23t,TLFGE23T,tlge23t,tlpye23t panel circuit indicator 5 mm package ingaa ? p technology all plastic mold type transparent lens line-up: 3 colors (pure green, green, pure yellow) high intensity light emission excellent low current light output straight lead type is also available tlpge23tp, TLFGE23Tp, tlge23tp, tlpye23tp applications: traffic signals, safety equipment, etc. line-up product name color material tlpge23t pure green TLFGE23T green tlge23t green tlpye23t pure yellow p ingaa maximum ratings (ta 25c) product name forward current i f (ma) reverse voltage v r (v) power dissipation p d (mw) operating temperature t opr (c) storage temperature t stg (c) tlpge23t 50 4 120 TLFGE23T 50 4 120 tlge23t 50 4 120 tlpye23t 50 4 120 40~100 40~120 unit: mm jedec D jeita D toshiba D weight: 0.31 g
tlpge23t,TLFGE23T,tlge23t,tlpye23t 2002-01-18 2 electrical and optical characteristics (ta 25c) typ. emission wavelength luminous intensity i v forward voltage v f reverse current i r product name d p i f min typ. i f typ. max i f max v r tlpge23t 558 (562) 14 20 850 3000 20 2.1 2.4 20 50 4 TLFGE23T 565 (568) 15 20 1530 5000 20 2.0 2.4 20 50 4 tlge23t 571 (574) 17 20 2720 7000 20 2.0 2.4 20 50 4 tlpye23t 580 (583) 14 20 2720 8000 20 2.0 2.4 20 50 4 unit nm ma mcd ma v ma a v precautions please be careful of the following: soldering temperature: 260c max, soldering time: 3 s max (soldering portion of lead: below the lead stopper) if the lead is formed, the lead should be formed up to 5 mm from the body of the device without forming stress to the resin. soldering should be performed after lead forming. this visible led lamp also emits some ir light. if a photodetector is located near the led lamp, please ensure that it will not be affected by this ir light.
tlpge23t,TLFGE23T,tlge23t,tlpye23t 2002-01-18 3 tlpge23t relative luminous intensity forward voltage v f (v) i f ? v f forward current i f (ma) forward current i f (ma) i v ? i f luminous intensity i v (mcd) case temperature tc (c) i v ? tc relative luminous intensity i v wavelength (nm) relative luminous intensity ? wavelength ambient temperature ta (c) i f ? ta allowable forward current i f (ma) radiation pattern ta 25c 40 0 120 60 0 40 80 20 20 60 80 100 20 20 80 5 0.1 3 10 1 0.3 0.5 0 40 60 560 520 640 0.8 0 0.6 1.0 0.2 0.4 540 580 600 620 i f 20 ma ta 25c 2.0 1.6 2.3 50 30 10 3 1 1.7 2.1 5 100 1.8 1.9 2.2 ta 25c 30 0 60 90 90 30 60 1.0 0.8 0.6 0.4 0.2 0 80 70 50 40 20 10 70 80 50 40 20 10 10 1 100 1000 30 100 10000 3 5 30 50 ta 25c 3000 300
tlpge23t,TLFGE23T,tlge23t,tlpye23t 2002-01-18 4 TLFGE23T relative luminous intensity forward voltage v f (v) i f ? v f forward current i f (ma) forward current i f (ma) i v ? i f luminous intensity i v (mcd) case temperature tc (c) i v ? tc relative luminous intensity i v wavelength (nm) relative luminous intensity ? wavelength ambient temperature ta (c) i f ? ta allowable forward current i f (ma) radiation pattern ta 25c 560 520 640 0.8 0 0.6 1.0 0.2 0.4 540 580 600 620 i f 20 ma ta 25c 40 0 120 60 0 40 80 20 20 60 80 100 20 20 80 5 0.1 3 10 1 0.3 0.5 0 40 60 2.0 1.6 2.3 50 30 10 3 1 1.7 2.1 5 100 1.8 1.9 2.2 ta 25c 30 0 60 90 90 30 60 1.0 0.8 0.6 0.4 0.2 0 80 70 50 40 20 10 70 80 50 40 20 10 10 1 100 10000 100 30000 3 5 30 50 1000 ta 25c 300 3000
tlpge23t,TLFGE23T,tlge23t,tlpye23t 2002-01-18 5 tlge23t radiation pattern ambient temperature ta (c) i f ? ta allowable forward current i f (ma) ta 25c relative luminous intensity forward voltage v f (v) i f ? v f forward current i f (ma) forward current i f (ma) i v ? i f luminous intensity i v (mcd) case temperature tc (c) i v ? tc relative luminous intensity i v wavelength (nm) relative luminous intensity ? wavelength 40 0 120 60 0 40 80 20 20 60 80 100 560 520 640 0.8 0 0.6 1.0 0.2 0.4 540 580 600 620 i f 20 ma ta 25c 20 20 80 5 0.1 3 10 1 0.3 0.5 0 40 60 2.0 1.6 2.3 50 30 10 3 1 1.7 2.1 5 100 1.8 1.9 2.2 ta 25c 30 0 60 90 90 30 60 1.0 0.8 0.6 0.4 0.2 0 80 70 50 40 20 10 70 80 50 40 20 10 10 1 100 10000 100 30000 3 5 30 50 1000 ta 25c 3000 300
tlpge23t,TLFGE23T,tlge23t,tlpye23t 2002-01-18 6 tlpye23t relative luminous intensity forward voltage v f (v) i f ? v f forward current i f (ma) forward current i f (ma) i v ? i f luminous intensity i v (mcd) case temperature tc (c) i v ? tc relative luminous intensity i v wavelength (nm) relative luminous intensity ? wavelength ambient temperature ta (c) i f ? ta allowable forward current i f (ma) radiation pattern ta 25c 2.0 1.6 2.3 50 30 10 3 1 1.7 2.1 5 100 1.8 1.9 2.2 ta 25c 40 0 120 60 0 40 80 20 20 60 80 100 580 540 660 0.8 0 0.6 1.0 0.2 0.4 560 600 620 640 i f 20 ma ta 25c 20 20 80 5 0.1 3 10 1 0.3 0.5 0 40 60 30 0 60 90 90 30 60 1.0 0.8 0.6 0.4 0.2 0 80 70 50 40 20 10 70 80 50 40 20 10 10 1 100 10000 100 30000 3 5 30 50 1000 ta 25c 300 3000
tlpge23t,TLFGE23T,tlge23t,tlpye23t 2002-01-18 7 toshiba is continually working to improve the quality and reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshiba products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semiconductor devices,? or ?toshiba semiconductor reliability handbook? etc.. the toshiba products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. unintended usage of toshiba products listed in this document shall be made at the customer?s own risk. gallium arsenide (gaas) is a substance used in the products described in this document. gaas dust and fumes are toxic. do not break, cut or pulverize the product, or use chemicals to dissolve them. when disposing of the products, follow the appropriate regulations. do not dispose of the products with other industrial waste or with domestic garbage. the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba corporation for any infringements of intellectual property or other rights of the third parties which may result from its use. no license is granted by implication or otherwise under any intellectual property or other rights of toshiba corporation or others. the information contained herein is subject to change without notice. 000707eac restrictions on product use
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